Henan Huachuang Communication Equipment Co.Ltd.
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650nm red diode laser China manufacturer
MQW 650nm FP LD
Low threshold current
High output power
Built-in InGaAsP monitor PD
Absolute maximum ratings
| Parameter | Symbol | Value | Unit |
| LD Forward current | IF(LD) | 100 | mA |
| LD Reverse voltage | VR(LD) | 2 | V |
| PD Forward current | IF(PD) | 2 | mA |
| PD Reverse voltag | VR(PD) | 30 | V |
| Operating temperature | TOP | -10 ~ +65 | °C |
| Storage temperature | TST | -40 ~ +85 | °C |
| Soldering temperature/time | - | 240/10 | °C/S |
Optical & electrical characteristics
| Parameter | Symbol | Test condition | Min. | Typ. | Max. | Unit |
| Output power | Pout | CW,24mA | 0.2 | 1.0 | 2.0 | mW |
| CW,70mA | - | 10.0 | 12.0 | mW | ||
| Center wavelength | λc | CW | 640 | 650 | 660 | nm |
| 630 | 635 | 640 | nm | |||
| Spectral width | Δλ | CW,Ith+15mA | - | - | 5 | nm |
| Threshold current | Ith | 650nm,25°C | 15 | 20 | 45 | mA |
| Operating voltage | Vop | CW, Ith+15mA | - | 2.15 | 2.5 | V |
| Monitor current | Im | CW, Ith+15mA | 0.05 | - | 0.5 | mA |
